Single-Event Characterization of the 20 nm Xilinx Kintex UltraScale Field-Programmable Gate Array under Heavy Ion Irradiation

Author D. S. Lee; G. R. Allen; G. Swift; M. Cannon; M. Wirthlin; J. S. George; R. Koga; K. Huey
Abstract This study examines the single-event response of the Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for single-event latch-up and single-event upset on configuration SRAM cells and Block RAM memories are provided.
Publication Radiation Effects Data Workshop (REDW), 2015 IEEE
Pages 1-6
Date 2015
DOI 10.1109/REDW.2015.7336736
ISBN 978-1-4673-7641-9;9781467376419


Field programmable gate arrays;Ions;Monitoring;Protons;Radiation effects;Random access memory;Testing